Invention Grant
US09548162B2 Capacitor, MEMS device, and method of manufacturing the MEMS device
有权
电容器，MEMS器件和制造MEMS器件的方法
- Patent Title: Capacitor, MEMS device, and method of manufacturing the MEMS device
- Patent Title (中): 电容器，MEMS器件和制造MEMS器件的方法
-
Application No.: US14367767Application Date: 2012-10-10
-
Publication No.: US09548162B2Publication Date: 2017-01-17
- Inventor: Chil Young Ji
- Applicant: LG INNOTEK CO., LTD.
- Applicant Address: KR Seoul
- Assignee: LG INNOTEK CO., LTD.
- Current Assignee: LG INNOTEK CO., LTD.
- Current Assignee Address: KR Seoul
- Agency: Saliwanchik, Lloyd & Eisenschenk
- Priority: KR10-2011-0138726 20111220
- International Application: PCT/KR2012/008205 WO 20121010
- International Announcement: WO2013/094860 WO 20130627
- Main IPC: H01G5/16
- IPC: H01G5/16 ; H01G5/38 ; H01L27/01 ; H01L49/02
Abstract:
Disclosed is a capacitor. The capacitor includes a plurality of capacitor units connected to each other in parallel. The capacitor unit includes a first capacitor, a second capacitor connected to the first capacitor in parallel, and a switch selectively connected to the first capacitor or the second capacitor.
Public/Granted literature
- US20140347781A1 Capacitor, Mems Device, and Method of Manufacturing the Mems Device Public/Granted day:2014-11-27
Information query
