Invention Grant
- Patent Title: Semiconductor device, manufacturing method of the same and method of suppressing decrease of flat band voltage
- Patent Title (中): 半导体装置及其制造方法以及抑制平带电压降低的方法
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Application No.: US14843614Application Date: 2015-09-02
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Publication No.: US09548204B2Publication Date: 2017-01-17
- Inventor: Junya Nishii , Tohru Oka
- Applicant: TOYODA GOSEI CO., LTD.
- Applicant Address: JP Kiyosu-Shi, Aichi-Ken
- Assignee: TOYODA GOSEI CO., LTD.
- Current Assignee: TOYODA GOSEI CO., LTD.
- Current Assignee Address: JP Kiyosu-Shi, Aichi-Ken
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2014-180084 20140904
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/28 ; H01L21/02 ; H01L29/49 ; H01L29/778 ; H01L29/78 ; H01L29/423 ; H01L29/20
Abstract:
There is provided a semiconductor device comprising a semiconductor layer that is made of a gallium-containing group III-V compound; and a first insulating film that is in contact with the semiconductor layer and contains silicon. An average density of gallium in the first insulating film between an interface of the first insulating film and the semiconductor layer and a plane away from the interface by 30 nm is less than 1.0×1018 cm−3. This configuration suppresses a decrease in flat band voltage and a decrease in threshold voltage.
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