Provided is an integrated circuit (IC) fabrication method. The method includes receiving a mask, the mask having a plurality of dies and receiving a wafer, the wafer having a resist layer. The method further includes exposing the resist layer using the mask with a fraction radiation dose thereby forming a first plurality of images; re-positioning the mask relative to the wafer; and exposing the resist layer using the mask with another fraction radiation dose. A second plurality of images is formed, wherein a portion of the second plurality of images is superimposed over another portion of the first plurality of images.