Invention Grant
- Patent Title: Post-CMP hybrid wafer cleaning technique
- Patent Title (中): CMP后混合晶片清洗技术
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Application No.: US14047144Application Date: 2013-10-07
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Publication No.: US09548222B2Publication Date: 2017-01-17
- Inventor: John H. Zhang
- Applicant: STMicroelectronics, Inc.
- Applicant Address: US TX Coppell
- Assignee: STMicroelectronics, Inc.
- Current Assignee: STMicroelectronics, Inc.
- Current Assignee Address: US TX Coppell
- Agency: Seed IP Law Group LLP
- Main IPC: H01L21/67
- IPC: H01L21/67

Abstract:
A brush-cleaning apparatus is disclosed for use in cleaning a semiconductor wafer after polishing. Embodiments of the brush-cleaning apparatus implemented with a multi-branch chemical dispensing unit are applied beneficially to clean semiconductor wafers, post-polish, using a hybrid cleaning method. An exemplary hybrid cleaning method employs a two-chemical sequence in which first and second chemical treatment modules are separate from one another, and are followed by a pH-neutralizing-rinse that occurs in a treatment module separate from the first and second chemical treatment modules. Implementation of such hybrid methods is facilitated by the multi-branch chemical dispensing unit, which provides separate chemical lines to different chemical treatment modules, and dispenses chemical to at least four different areas of each wafer during single-wafer processing in an upright orientation. The multi-branch chemical dispensing unit provides a flexible, modular building block for constructing various equipment configurations that use multiple chemical treatments and/or pH neutralization steps.
Public/Granted literature
- US20150096591A1 POST-CMP HYBRID WAFER CLEANING TECHNIQUE Public/Granted day:2015-04-09
Information query
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