Invention Grant
- Patent Title: Member for semiconductor manufacturing apparatus and method for manufacturing the same
- Patent Title (中): 半导体制造装置及其制造方法
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Application No.: US14058604Application Date: 2013-10-21
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Publication No.: US09548226B2Publication Date: 2017-01-17
- Inventor: Yutaka Unno , Tetsuhisa Abe
- Applicant: NGK INSULATORS, LTD.
- Applicant Address: JP Nagoya
- Assignee: NGK Insulators, Ltd.
- Current Assignee: NGK Insulators, Ltd.
- Current Assignee Address: JP Nagoya
- Agency: Burr & Brown, PLLC
- Main IPC: H01L21/67
- IPC: H01L21/67 ; B23K20/12 ; H01L21/683 ; H01L21/687

Abstract:
A high-frequency power supply includes a shaft bonded to one surface of a plate serving as a gas distributor plate. The plate includes a radio-frequency electrode buried therein. The shaft has a through-hole through which a gas flows. The plate and the shaft are made of a ceramic material. The shaft has a double-tube structure including the inner tube and the outer tube . The interior space of the inner tube forms the through-hole. The plate is hermetically solid-state bonded to the inner tube and the outer tube. The shaft is bonded to the center of the plate.
Public/Granted literature
- US20140117119A1 MEMBER FOR SEMICONDUCTOR MANUFACTURING APPARATUS AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2014-05-01
Information query
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