Invention Grant
- Patent Title: Self aligned via and pillar cut for at least a self aligned double pitch
- Patent Title (中): 自对准通孔和柱切割至少自对准双音高
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Application No.: US14755647Application Date: 2015-06-30
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Publication No.: US09548243B1Publication Date: 2017-01-17
- Inventor: Benjamin D. Briggs , Lawrence A. Clevenger , Michael Rizzolo , Terry A. Spooner , Theodorus E. Standaert
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Steven Meyers
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/31 ; H01L21/311 ; H01L21/3105
Abstract:
A method of forming via openings that includes forming sidewall spacers on a plurality of mandrels that are overlying a hardmask layer that is present on an interlevel dielectric layer. Etching the hardmask layer using a portion of the sidewall spacers and the plurality of mandrels to form a first pillar of hardmask material. The interlevel dielectric layer is etched using the first pillar of hardmask material as a mask to define a first via opening. The plurality of mandrels are removed. The hardmask layer is etched using the spacers to define a second pillar of hardmask material. The interlevel dielectric layer is etched using the second pillar of hardmask material to provide a second via opening.
Public/Granted literature
- US20170004996A1 SELF ALIGNED VIA AND PILLAR CUT FOR AT LEAST A SELF ALIGNED DOUBLE PITCH Public/Granted day:2017-01-05
Information query
IPC分类:
