Invention Grant
- Patent Title: Methods for producing semiconductor devices
- Patent Title (中): 半导体器件的制造方法
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Application No.: US13947135Application Date: 2013-07-22
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Publication No.: US09548247B2Publication Date: 2017-01-17
- Inventor: Andreas Voerckel
- Applicant: Infineon Technologies Austria AG
- Applicant Address: AT Villach
- Assignee: INFINEON TECHNOLOGIES AUSTRIA AG
- Current Assignee: INFINEON TECHNOLOGIES AUSTRIA AG
- Current Assignee Address: AT Villach
- Main IPC: H01L23/32
- IPC: H01L23/32 ; H01L21/82 ; H01L21/56 ; H01L21/768 ; H01L23/00
Abstract:
A method for producing a semiconductor device in accordance with various embodiments may include providing a semiconductor workpiece attached to a first carrier; dicing the semiconductor workpiece and the carrier so as to form at least one individual semiconductor chip; mounting the at least one semiconductor chip with a side facing away from the carrier, to an additional carrier.
Public/Granted literature
- US09520325B2 Methods for producing semiconductor devices Public/Granted day:2016-12-13
Information query
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