Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14457701Application Date: 2014-08-12
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Publication No.: US09548253B2Publication Date: 2017-01-17
- Inventor: Kei Yamaguchi , Yuji Ichimura , Daisuke Kimijima
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kawasaki
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kawasaki
- Priority: JP2013-185063 20130906; JP2014-141603 20140709
- Main IPC: H01L21/56
- IPC: H01L21/56 ; H01L23/29 ; H01L23/31

Abstract:
A method of manufacturing a semiconductor device and a semiconductor device that is manufactured by the method. In the method of manufacturing a semiconductor device, a releasing sheet is disposed in close contact with a hole of an aluminum plate having the recessed hole, and a skeleton structure of a semiconductor device is put into the recessed hole. Then, liquid epoxy resin is poured into the recessed hole. After hardening, the epoxy resin body 10 including the skeleton structure is taken out from the recessed hole to complete manufacturing the semiconductor device. Using a simple molding jig including the aluminum plate, and covering the skeleton structure with the epoxy resin body, a highly reliable semiconductor device with a case-less construction can be manufactured.
Public/Granted literature
- US20150069601A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2015-03-12
Information query
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