Invention Grant
- Patent Title: Connection member, semiconductor device, and stacked structure
- Patent Title (中): 连接构件，半导体器件和堆叠结构
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Application No.: US14466493Application Date: 2014-08-22
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Publication No.: US09548279B2Publication Date: 2017-01-17
- Inventor: Atsuko Iida , Tadahiro Sasaki , Nobuto Managaki , Yutaka Onozuka , Hiroshi Yamada
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Minato-ku
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2013-197853 20130925
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L23/00 ; H01L23/498 ; H01L23/538 ; H01L23/66 ; H01L23/04 ; H01L23/60 ; H05K1/11 ; H05K3/40
Abstract:
A connection member according to an embodiment includes a dielectric material, a penetrating via penetrating through the dielectric material, a first metal plane provided in the dielectric material, the first metal plane being perpendicular to an extension direction of the penetrating via, the first metal plane crossing the penetrating via, and a second metal plane provided n or on the dielectric material in parallel with the extension direction of the penetrating via, the second metal plane connected to the first metal plane.
Public/Granted literature
- US20150084208A1 CONNECTION MEMBER, SEMICONDUCTOR DEVICE, AND STACKED STRUCTURE Public/Granted day:2015-03-26
Information query
IPC分类:
