Invention Grant
- Patent Title: Metal contact for semiconductor device
- Patent Title (中): 半导体器件的金属接触
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Application No.: US14440872Application Date: 2013-10-30
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Publication No.: US09548282B2Publication Date: 2017-01-17
- Inventor: Chang-Ming Lin , Lei Shi , Yujuan Tao
- Applicant: NANTONG FUJITSU MICROELECTRONICS CO., LTD.
- Applicant Address: CN Nantong, Jiangsu
- Assignee: NANTONG FUJITSU MICROELECTRONICS CO., LTD.
- Current Assignee: NANTONG FUJITSU MICROELECTRONICS CO., LTD.
- Current Assignee Address: CN Nantong, Jiangsu
- Agency: RatnerPrestia
- Priority: CN201210444471 20121108; CN201210444474 20121108
- International Application: PCT/CN2013/086214 WO 20131030
- International Announcement: WO2014/071815 WO 20140515
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L23/31
Abstract:
A semiconductor device and a manufacturing method thereof. The semiconductor device includes a semiconductor substrate (300) provided with a plurality of pads (301), columnar electrodes on the pads (301) and a solder ball (321) provided on the columnar electrode. The columnar electrode comprises a main body (307) and a groove in the main body (307), and an opening of the groove is overlapped with the top surface of the columnar electrode. The solder ball (321) comprises a metal bump (320) arranged on the top of the columnar electrode and a filling part (319) filled in the groove. The solder ball and the columnar electrode form a structure similar to a bolt; thus the binding force between the solder ball and the columnar electrode is improved.
Public/Granted literature
- US20150287688A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2015-10-08
Information query
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