Invention Grant
US09548353B2 Wide band-gap semiconductor device including schotky electrode and method for producing same
有权
包括schotky电极的宽带隙半导体器件及其制造方法
- Patent Title: Wide band-gap semiconductor device including schotky electrode and method for producing same
- Patent Title (中): 包括schotky电极的宽带隙半导体器件及其制造方法
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Application No.: US14792991Application Date: 2015-07-07
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Publication No.: US09548353B2Publication Date: 2017-01-17
- Inventor: Masatoshi Aketa , Yuta Yokotsuji
- Applicant: ROHM CO., LTD.
- Applicant Address: JP Kyoto
- Assignee: ROHM CO., LTD.
- Current Assignee: ROHM CO., LTD.
- Current Assignee Address: JP Kyoto
- Agency: Rabin & Berdo, P.C.
- Priority: JP2011-111129 20110518; JP2011-138400 20110622
- Main IPC: H01L27/095
- IPC: H01L27/095 ; H01L29/47 ; H01L29/812 ; H01L31/07 ; H01L31/108 ; H01L29/06 ; H01L29/16 ; H01L29/872 ; H01L21/04 ; H01L21/265 ; H01L29/20 ; H01L29/66 ; H01L29/08 ; H01L29/36
Abstract:
A semiconductor device of the present invention includes a semiconductor layer made of a wide bandgap semiconductor and a Schottky electrode being in contact with a surface of the semiconductor layer. The semiconductor layer includes a drift layer that forms the surface of the semiconductor layer and a high-resistance layer that is formed on a surface layer portion of the drift layer and that has higher resistance than the drift layer. The high-resistance layer is formed by implanting impurity ions from the surface of the semiconductor layer and then undergoing annealing treatment at less than 1500° C.
Public/Granted literature
- US20150311278A1 SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME Public/Granted day:2015-10-29
Information query
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