Invention Grant
- Patent Title: Light-emitting diode and fabrication method thereof
- Patent Title (中): 发光二极管及其制造方法
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Application No.: US14886017Application Date: 2015-10-17
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Publication No.: US09548428B2Publication Date: 2017-01-17
- Inventor: Cuicui Sheng , Shuying Qiu , Chaoyu Wu , Ching-Shan Tao , Wenbi Cai
- Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Applicant Address: CN Xiamen
- Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee Address: CN Xiamen
- Agency: Syncoda LLC
- Agent Feng Ma; Junjie Feng
- Priority: CN201310071915 20130307
- Main IPC: H01L33/46
- IPC: H01L33/46 ; H01L33/00 ; H01L33/20 ; H01L33/60 ; H01L25/075 ; H01L33/10

Abstract:
A light emitting diode includes: a substrate of front and back main surfaces; a V-shaped groove, which has a reflecting surface, formed over front surface of the conductive substrate; a light-emitting epitaxial layer, the margin of which has its vertical projection between the bottom and the inner margin of the V-shaped groove, formed over the substrate, so that light emitted from the light-emitting epitaxial layer margin is incident to the mirror surface of the V-shaped groove and emits outwards. This structure can effectively improve extraction efficiency of device and control path of light at peripheral region of the light-emitting epitaxial layer.
Public/Granted literature
- US20160049557A1 Light-Emitting Diode and Fabrication Method Thereof Public/Granted day:2016-02-18
Information query
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