Invention Grant
- Patent Title: Perpendicular MTJ stacks with magnetic anisotrophy enhancing layer and crystallization barrier layer
- Patent Title (中): 垂直MTJ堆叠与磁性各向异性增强层和结晶阻挡层
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Application No.: US14659425Application Date: 2015-03-16
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Publication No.: US09548441B2Publication Date: 2017-01-17
- Inventor: Kaan Oguz , Mark L. Doczy , Brian Doyle , Uday Shah , David L. Kencke , Roksana Golizadeh Mojarad , Robert S. Chau
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: H01L43/02
- IPC: H01L43/02 ; H01L43/08 ; H01L43/12 ; H01L43/10 ; G11C11/16 ; H01F10/193 ; H01F10/32 ; H01L27/22 ; H01L29/82 ; H01F41/32
Abstract:
Magnetic tunnel junctions (MTJ) suitable for spin transfer torque memory (STTM) devices, include perpendicular magnetic layers and one or more anisotropy enhancing layer(s) separated from a free magnetic layer by a crystallization barrier layer. In embodiments, an anisotropy enhancing layer improves perpendicular orientation of the free magnetic layer while the crystallization barrier improves tunnel magnetoresistance (TMR) ratio with better alignment of crystalline texture of the free magnetic layer with that of a tunneling layer.
Public/Granted literature
- US20150194596A1 PERPENDICULAR MTJ STACKS WITH MAGNETIC ANISOTROPHY ENHANCING LAYER AND CRYSTALLIZATION BARRIER LAYER Public/Granted day:2015-07-09
Information query
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