Invention Grant
US09551749B2 Test circuit for very low voltage and bias scan testing of integrated circuit
有权
用于集成电路非常低电压和偏压扫描测试的测试电路
- Patent Title: Test circuit for very low voltage and bias scan testing of integrated circuit
- Patent Title (中): 用于集成电路非常低电压和偏压扫描测试的测试电路
-
Application No.: US14743977Application Date: 2015-06-18
-
Publication No.: US09551749B2Publication Date: 2017-01-24
- Inventor: Wanggen Zhang , Huangsheng Ding , Jianzhou Wu
- Applicant: FREESCALE SEMICONDUCTOR, INC.
- Applicant Address: US TX Austin
- Assignee: FREESCALE SEMICONDUCTOR, INC.
- Current Assignee: FREESCALE SEMICONDUCTOR, INC.
- Current Assignee Address: US TX Austin
- Agent Charles E. Bergere
- Priority: CN201410858263 20141222
- Main IPC: G01R31/28
- IPC: G01R31/28 ; G01R31/3185 ; G01R31/30

Abstract:
Test circuitry for an integrated circuit (IC) that has a scan chain includes a control unit for applying a test pattern and a clock signal to the scan chain, and for varying the level of a supply voltage during a scan test procedure. In a first test phase, the supply voltage is set to the rated voltage level of the IC while a test pattern is shifted into the scan chain at a fast rate. A second, capture phase is run at a lower rate and the supply voltage is reduced to a lower level such that defects that cannot be detected when the capture phase is run at the rated voltage are observable yet switching elements in the IC still function correctly. Running the shift phase at the higher speed reduces the overall test time compared with known very low voltage (VLV) scan test procedures.
Public/Granted literature
- US20160178695A1 TEST CIRCUIT FOR VERY LOW VOLTAGE AND BIAS SCAN TESTING OF INTEGRATED CIRCUIT Public/Granted day:2016-06-23
Information query