Invention Grant
- Patent Title: Cut mask design layers to provide compact cell height
- Patent Title (中): 切割面膜设计层以提供紧凑的细胞高度
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Application No.: US14247409Application Date: 2014-04-08
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Publication No.: US09551923B2Publication Date: 2017-01-24
- Inventor: Yen-Sen Wang , Ming-Yi Lin , Chen-Hung Lu , Jyh-Kang Ting
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Associates, LLC
- Main IPC: G06F17/50
- IPC: G06F17/50 ; G03F1/00

Abstract:
Some embodiments relate to a method of designing an integrated circuit layout. In this method, a plurality of design shapes are provided on different design layers over an active area within a graphical representation of the layout. A connection extends perpendicularly between a first design shape formed on a first design layer and a second design shape formed on the first design layer. First and second cut mask shapes on first and second cut mask design layers, respectively, are generated. The first cut shape removes portions of the first design layer and the second cut shape removes portions of the second design layer.
Public/Granted literature
- US20150286765A1 CUT MASK DESIGN LAYERS TO PROVIDE COMPACT CELL HEIGHT Public/Granted day:2015-10-08
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