Invention Grant
US09551938B2 Light source optimizing method, exposure method, device manufacturing method, program, exposure apparatus, lithography system, light source evaluation method, and light source modulation method 有权
光源优化方法,曝光方法,装置制造方法,程序,曝光装置,光刻系统,光源评估方法和光源调制方法

  • Patent Title: Light source optimizing method, exposure method, device manufacturing method, program, exposure apparatus, lithography system, light source evaluation method, and light source modulation method
  • Patent Title (中): 光源优化方法,曝光方法,装置制造方法,程序,曝光装置,光刻系统,光源评估方法和光源调制方法
  • Application No.: US13366829
    Application Date: 2012-02-06
  • Publication No.: US09551938B2
    Publication Date: 2017-01-24
  • Inventor: Tomoyuki MatsuyamaNaonori Kita
  • Applicant: Tomoyuki MatsuyamaNaonori Kita
  • Applicant Address: JP Tokyo
  • Assignee: NIKON CORPORATION
  • Current Assignee: NIKON CORPORATION
  • Current Assignee Address: JP Tokyo
  • Agency: Oliff PLC
  • Priority: JP2010-035476 20100220
  • Main IPC: G03B27/68
  • IPC: G03B27/68 G03F7/20
Light source optimizing method, exposure method, device manufacturing method, program, exposure apparatus, lithography system, light source evaluation method, and light source modulation method
Abstract:
Disclosed is a light source optimizing method wherein: a light source shape obtained as the result of SMO is set as a target, the SMO being an optimizing calculation method for optimizing a mask pattern and illumination light source, a spatial light modulator is controlled such that a deviation from the target is within an acceptable range, and the shape of the illumination light source is set; the image of the pattern obtained as the results of the SMO is formed on a wafer, using illumination light emitted from the illumination light source having the set light source shape, an OPE is evaluated as image-forming performance using the detection results obtained by detecting the image of the pattern thus formed; and the light source shape is optimized.
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