Invention Grant
US09552256B2 Semiconductor memory device including non-volatile memory, cache memory, and computer system
有权
包括非易失性存储器，高速缓冲存储器和计算机系统的半导体存储器件
- Patent Title: Semiconductor memory device including non-volatile memory, cache memory, and computer system
- Patent Title (中): 包括非易失性存储器，高速缓冲存储器和计算机系统的半导体存储器件
-
Application No.: US14978538Application Date: 2015-12-22
-
Publication No.: US09552256B2Publication Date: 2017-01-24
- Inventor: Sun-gyeum Kim , Hyeok-man Kwon , Young-jun Kwon , Ki-young Choi , Jun-whan Ahn
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2012-0135558 20121127
- Main IPC: G11C29/00
- IPC: G11C29/00 ; G06F11/10 ; G11C29/52
Abstract:
In one embodiment, the memory device includes a data storage region and an error correction (ECC) region. The data storage region configured to store a first number of data blocks. The ECC region is configured to store a second number of ECC blocks. Each of the second number of ECC blocks is configured to store ECC information. The second number of the ECC blocks is associated with the first number of data blocks, and the second number is less than the first number.
Public/Granted literature
- US20160110253A1 SEMICONDUCTOR MEMORY DEVICE INCLUDING NON-VOLATILE MEMORY, CACHE MEMORY, AND COMPUTER SYSTEM Public/Granted day:2016-04-21
Information query
