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US09552857B1 Address generation circuit and semiconductor memory device including the same 有权
地址生成电路和包括其的半导体存储器件

Address generation circuit and semiconductor memory device including the same
Abstract:
An address generation circuit includes: a first address control clock generation unit suitable for generating a first address control clock signal in response to an internal clock signal; a second address control clock generation unit suitable for generating a second address control clock signal in response to one of an address initialization signal and the first address control clock signal; an address counting unit suitable for counting the second address control clock signal and generating a counting address; and a repair control unit suitable for latching the counting address in response to the second address control clock signal, comparing the latched counting address with a repair address, and generating a redundancy address based on the comparison result.
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