Invention Grant
- Patent Title: Writable device based on alternating current
- Patent Title (中): 基于交流电的可写器件
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Application No.: US14889738Application Date: 2013-05-29
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Publication No.: US09552877B2Publication Date: 2017-01-24
- Inventor: Robert J. Brooks
- Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
- Applicant Address: US TX Houston
- Assignee: Hewlett Packard Enterprise Development LP
- Current Assignee: Hewlett Packard Enterprise Development LP
- Current Assignee Address: US TX Houston
- Agency: Hewlett Packard Enterprise Patent Department
- International Application: PCT/US2013/043191 WO 20130529
- International Announcement: WO2014/193371 WO 20141204
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C13/00
Abstract:
A nonvolatile memory device is writable to a high resistance state and a low resistance state. The nonvolatile memory device may be heated to at least a threshold temperature, based on application of an alternating current (AC) signal, and may be written based on application of a voltage bias.
Public/Granted literature
- US20160104531A1 WRITABLE DEVICE BASED ON ALTERNATING CURRENT Public/Granted day:2016-04-14
Information query
