Invention Grant
US09552886B2 Memory system and method of driving memory system using zone voltages
有权
使用区域电压驱动存储器系统的存储器系统和方法
- Patent Title: Memory system and method of driving memory system using zone voltages
- Patent Title (中): 使用区域电压驱动存储器系统的存储器系统和方法
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Application No.: US14855433Application Date: 2015-09-16
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Publication No.: US09552886B2Publication Date: 2017-01-24
- Inventor: Sang-Wan Nam , Minsu Kim , Kang-Bin Lee , Kitae Park
- Applicant: Sang-Wan Nam , Minsu Kim , Kang-Bin Lee , Kitae Park
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2013-0015295 20130213
- Main IPC: G11C16/10
- IPC: G11C16/10 ; G11C16/26 ; G11C16/30 ; G11C5/14 ; G11C16/24 ; G11C16/08 ; G11C16/04 ; G11C16/16 ; G11C16/34 ; G11C16/14
Abstract:
A method is provided for driving a nonvolatile memory device, including multiple strings, where each string is formed by penetrating plate-shaped word lines stacked on a substrate. The method includes configuring the word lines of a string in multiple zones based on zone configuration information, and applying zone voltages to the zones, respectively. The zone configuration information is varied according to a mode of operation.
Public/Granted literature
- US20160005478A1 MEMORY SYSTEM AND METHOD OF DRIVING MEMORY SYSTEM USING ZONE VOLTAGES Public/Granted day:2016-01-07
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