The present invention discloses an inductively coupled coil and an inductively coupled plasma device using the same. The inductively coupled coil comprises an internal coil and an exterior coil which are respective from each other and coaxially arranged, internal coil comprising a plurality of internal respective branches having the same configurations which are nested together, the plurality of internal respective branches being arranged symmetrically with respect to an axis of the inductively coupled coil; the external coil comprising a plurality of external respective branches having the same configurations which are nested together, the plurality of external respective branches being arranged symmetrically with respect to the axis of the inductively coupled coil. The inductively coupled coil is located on the reaction chamber of the inductively coupled plasma device and is connected to a RF source. It can make the plasma distribute uniformly on the wafer in the reaction chamber so that the difference in chemical reaction rate on the surface of the wafer is small and the quality of the etched wafer is improved. They can be applied in a semiconductor wafer manufacturing apparatus, and they can also be adapted to other apparatuses.