Invention Grant
- Patent Title: Substrate processing method, substrate processing apparatus, and storage medium
- Patent Title (中): 基板处理方法，基板处理装置和存储介质
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Application No.: US14297661Application Date: 2014-06-06
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Publication No.: US09552987B2Publication Date: 2017-01-24
- Inventor: Yuichiro Miyata , Keiichi Tanaka , Kenichi Ueda , Takahiro Shiozawa
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Nath, Goldberg & Meyer
- Agent Jerald L. Meyer
- Priority: JP2013-122058 20130610
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L21/302 ; H01L21/461 ; B44C1/22 ; H01L21/027 ; H01L21/02 ; H01L21/67 ; G03F7/42 ; H01L21/768
Abstract:
A substrate processing method is performed to improve surface roughness of a pattern mask formed on a substrate by being exposed and developed. The method includes supplying a first solvent in a gaseous state to a surface of the substrate to dissolve the pattern mask, and supplying a second solvent to the surface of the substrate, which is supplied with the first solvent, to dissolve the pattern mask, wherein a permeability of the second solvent is lower than a permeability of the first solvent.
Public/Granted literature
- US20140363976A1 SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING APPARATUS, AND STORAGE MEDIUM Public/Granted day:2014-12-11
Information query
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