Invention Grant
- Patent Title: Method of forming a molding layer for semiconductor package
- Patent Title (中): 形成半导体封装用成型层的方法
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Application No.: US14698694Application Date: 2015-04-28
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Publication No.: US09553001B2Publication Date: 2017-01-24
- Inventor: Hsien-Wei Chen , Jie Chen
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/56 ; H01L23/48 ; H01L23/00 ; H01L25/00 ; H01L25/065 ; H01L21/683

Abstract:
A method of forming a molding layer includes the following operations: forming a substrate having at least one column structure thereon; flipping over the substrate having the column structure such that the column structure is beneath the substrate; dipping the column structure of the flipped substrate into a molding material fluid contained in a container; and separating the column structure of the flipped substrate from the container to form a molding layer covering and in contact with the column structure.
Public/Granted literature
- US20160322238A1 METHOD OF FORMING A MOLDING LAYER FOR SEMICONDUCTOR PACKAGE Public/Granted day:2016-11-03
Information query
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