A method includes forming a layer of insulating material above first and second transistors, within the layer of insulating material, forming a set of initial device-level contacts for each of the first and second transistors, wherein each set of initial device-level contacts comprises a plurality of source/drain contacts and a gate contact, forming an initial local interconnect structure that is conductively coupled to one of the initial device-level contacts in each of the first and second transistors, and removing the initial local interconnect structure and portions, but not all, of the initial device-level contacts for each the first and second transistors. The method also includes forming a copper local interconnect structure and copper caps above the recessed device-level contacts.