A method of forming a semiconductor device is provided including providing a semiconductor-on-insulator (SOI) wafer comprising a first semiconductor layer comprising a first material component and formed on a buried oxide (BOX) layer, and forming a channel region of a P-channel transistor device, including forming a second semiconductor layer only over a first portion of the first semiconductor layer, wherein the second semiconductor layer comprises the first material component and a second material component different from the first material component, forming an opening in the first semiconductor layer outside the first portion and subsequently performing a thermal anneal to push the second material component from the second semiconductor layer into the first semiconductor layer.