Invention Grant
- Patent Title: Electrically conductive interconnect including via having increased contact surface area
- Patent Title (中): 包括通孔的导电互连具有增加的接触表面积
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Application No.: US14533636Application Date: 2014-11-05
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Publication No.: US09553044B2Publication Date: 2017-01-24
- Inventor: Hsueh-Chung Chen , James J. Demarest , Sean Teehan , Chih-Chao Yang
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L21/768 ; H01L23/532

Abstract:
An interconnect structure includes a first dielectric layer and a second dielectric layer each extending along a first axis to define a height and a second axis opposite the first axis to define a length. A capping layer is interposed between the first dielectric layer and the second dielectric layer. At least one electrically conductive feature is embedded in at least one of the first dielectric layer and the second dielectric layer. At least one electrically conductive via extends through the second dielectric layer and the capping layer. The via has an end that contacts the conductive feature. The end includes a flange having at least one portion extending laterally along the first axis to define a contact area between the via and the at least one conductive feature.
Public/Granted literature
- US20160126183A1 ELECTRICALLY CONDUCTIVE INTERCONNECT INCLUDING VIA HAVING INCREASED CONTACT SURFACE AREA Public/Granted day:2016-05-05
Information query
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