Invention Grant
- Patent Title: Semiconductor device and manufacturing method therefor
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US15072148Application Date: 2016-03-16
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Publication No.: US09553060B2Publication Date: 2017-01-24
- Inventor: Kazuyuki Omori
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JP2015-080779 20150410
- Main IPC: H01L21/76
- IPC: H01L21/76 ; H01L23/00 ; H01L23/31 ; H01L23/29 ; H01L21/768
Abstract:
Provided are a semiconductor device and a manufacturing method therefor that can prevent electric short-circuiting between redistribution lines. A barrier film is formed over each side surface of a copper redistribution line. The barrier film includes, for example, a manganese oxide film. The barrier film is also in contact with each end surface of a barrier metal film that is located in the position receding inward from the side surface of the copper redistribution line. A redistribution portion is formed by the copper redistribution line, the barrier film, and the barrier metal film.
Public/Granted literature
- US20160300804A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR Public/Granted day:2016-10-13
Information query
IPC分类:
