Invention Grant
- Patent Title: Switching element, semiconductor device, and semiconductor device manufacturing method
- Patent Title (中): 开关元件，半导体器件和半导体器件制造方法
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Application No.: US14897797Application Date: 2013-09-09
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Publication No.: US09553084B2Publication Date: 2017-01-24
- Inventor: Shigeru Hasegawa , Kazuhiro Morishita , Takeshi Kitani
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- International Application: PCT/JP2013/074284 WO 20130909
- International Announcement: WO2015/033476 WO 20150312
- Main IPC: H01L27/06
- IPC: H01L27/06 ; H01L21/66 ; H01L27/10 ; H01L29/78 ; H01L29/16 ; H01L29/20 ; H01L21/52 ; H01L21/8234 ; H01L23/522 ; H01L23/528 ; H01L49/02 ; H01L29/423 ; H01L29/739
Abstract:
According to the present invention, a switching element includes a substrate, a first gate pad formed on the substrate, a second gate pad formed on the substrate, a first resistor portion formed on the substrate, the first resistor portion connecting the first gate pad and the second gate pad to each other, and a cell region formed on the substrate and connected to the first gate pad. Thus, measurement of the gate resistance value and selection from gate resistances of the switching element can be performed after the completion of the gate-resistor-incorporating-type switching element.
Public/Granted literature
- US20160148927A1 SWITCHING ELEMENT, SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD Public/Granted day:2016-05-26
Information query
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