Invention Grant
- Patent Title: Fabricating method for high voltage semiconductor power switching device
- Patent Title (中): 高压半导体功率开关器件的制造方法
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Application No.: US14949021Application Date: 2015-11-23
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Publication No.: US09553085B2Publication Date: 2017-01-24
- Inventor: Chiu-Sing Celement Tse , On-Bon Peter Chan , Chi-Keung Tang
- Applicant: Mosway Semiconductor Limited
- Applicant Address: CN Tsuen Wan, New Territories, Hong Kong
- Assignee: Mosway Semiconductor Limited
- Current Assignee: Mosway Semiconductor Limited
- Current Assignee Address: CN Tsuen Wan, New Territories, Hong Kong
- Agency: Alix, Yale & Ristas, LLP
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L27/06 ; H01L21/56 ; H01L21/8249 ; H01L21/84 ; H01L23/535 ; H01L27/082 ; H01L27/12 ; H01L29/06 ; H01L29/08 ; H01L29/10 ; H01L29/417 ; H01L29/423 ; H01L29/45 ; H01L29/49 ; H01L29/872
Abstract:
A three terminal high voltage Darlington bipolar transistor power switching device includes two high voltage bipolar transistors, with collectors connected together serving as the collector terminal. The base of the first high voltage bipolar transistor serves as the base terminal. The emitter of the first high voltage bipolar transistor connects to the base of the second high voltage bipolar transistor (inner base), and the emitter of the second high voltage bipolar transistor serves as the emitter terminal. A diode has its anode connected to the inner base (emitter of the first high voltage bipolar transistor, or base of the second high voltage bipolar transistor), and its cathode connected to the base terminal. Similarly, a three terminal hybrid MOSFET/bipolar high voltage switching device can be formed by replacing the first high voltage bipolar transistor of the previous switching device by a high voltage MOSFET.
Public/Granted literature
- US20160079237A1 High Voltage Semiconductor Power Switching Device Public/Granted day:2016-03-17
Information query
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