Invention Grant
- Patent Title: Semiconductor structure and method for manufacturing the same
- Patent Title (中): 半导体结构及其制造方法
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Application No.: US14863008Application Date: 2015-09-23
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Publication No.: US09553091B1Publication Date: 2017-01-24
- Inventor: Manoj Kumar , Chia-Hao Lee , Chih-Cherng Liao , Ching-Yi Hsu , Jun-Wei Chen
- Applicant: Vanguard International Semiconductor Corporation
- Applicant Address: TW Hsinchu
- Assignee: Vanguard International Semiconductor Corporation
- Current Assignee: Vanguard International Semiconductor Corporation
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/336 ; H01L27/092 ; H01L21/8238
Abstract:
A semiconductor structure is provided, which includes a first high-voltage MOS device region having a first well and a first light-doping region in a part of the first well, wherein the conductive type of the first well and the conductive type of the first light-doping region are opposite. The first high-voltage MOS device region also includes a first gate stack on a part of the first well and a part of the first light-doping region, and first heavy-doping regions in the first well and the first light-doping region at two sides of the gate stack, wherein the conductive type of the first heavy-doping region and the conductive type of the first well are the same. The first light-doping region between the first well and the first heavy-doping regions is a channel region of the first high-voltage MOS device region.
Information query
IPC分类:
