Invention Grant
- Patent Title: Thin film transistor array substrate
- Patent Title (中): 薄膜晶体管阵列基板
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Application No.: US14483492Application Date: 2014-09-11
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Publication No.: US09553111B2Publication Date: 2017-01-24
- Inventor: Masami Hayashi , Takafumi Hashiguchi
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: JP2013-192769 20130918
- Main IPC: H01L27/14
- IPC: H01L27/14 ; H01L27/12 ; G02F1/1362

Abstract:
A pixel electrode of an array substrate is connected with a drain electrode of a TFT via a first aperture formed on a second interlayer insulating film, a second aperture that includes a bottom portion of the first aperture and is formed on a common electrode, a third aperture that includes at least a part of the bottom portion of the first aperture, is included in a second aperture and is formed on a third interlayer insulating film, and a fourth aperture that is formed on the first interlayer insulating film in a region where the third aperture overlaps with the bottom portion of the first aperture.
Public/Granted literature
- US20150076501A1 THIN FILM TRANSISTOR ARRAY SUBSTRATE Public/Granted day:2015-03-19
Information query
IPC分类: