Invention Grant
US09553120B2 Image sensor using backside illumination photodiode and method for manufacturing the same
有权
使用背面照明光电二极管的图像传感器及其制造方法
- Patent Title: Image sensor using backside illumination photodiode and method for manufacturing the same
- Patent Title (中): 使用背面照明光电二极管的图像传感器及其制造方法
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Application No.: US14529783Application Date: 2014-10-31
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Publication No.: US09553120B2Publication Date: 2017-01-24
- Inventor: Jae Young Park , Young Ha Lee , Jun Ho Won , Do Young Lee
- Applicant: SiliconFile Technologies Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SILICONFILE TECHNOLOGIES INC.
- Current Assignee: SILICONFILE TECHNOLOGIES INC.
- Current Assignee Address: KR Gyeonggi-do
- Agency: I P & T Group LLP
- Priority: KR10-2013-0130838 20131031
- Main IPC: H01L27/146
- IPC: H01L27/146

Abstract:
A technology capable of simplifying a process and securing a misalignment margin when bonding two wafers to manufacture an image sensor using backside illumination photodiodes. When manufacturing an image sensor through a 3D CIS (CMOS image sensor) manufacturing process, two wafers, that is, a first wafer and a second wafer are electrically connected using the vias of one wafer and the bonding pads of the other wafer. Also, when manufacturing an image sensor through a 3D CIS manufacturing process, two wafers are electrically connected using the vias of both the two wafers.
Public/Granted literature
- US20150115330A1 IMAGE SENSOR USING BACKSIDE ILLUMINATION PHOTODIODE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2015-04-30
Information query
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