Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
-
Application No.: US14835284Application Date: 2015-08-25
-
Publication No.: US09553121B2Publication Date: 2017-01-24
- Inventor: Hiroaki Sekikawa , Hidenori Sato , Yotaro Goto , Takuya Maruyama , Masaaki Shinohara
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JP2014-174143 20140828
- Main IPC: H01L21/4763
- IPC: H01L21/4763 ; H01L27/146 ; H01L21/768 ; H01L21/3105 ; H01L21/66 ; H01L23/532
Abstract:
A connection portion connects a copper-based first wiring layer with a copper-based second wiring layer arranged on the upper side of a first diffusion barrier film. The first diffusion barrier film includes a first opening region formed in a semiconductor circuit region that is a partial region in a two-dimensional view and a second opening region formed as an opening region different from the first opening region in a two-dimensional view. The opening regions are formed in a region different from an opening region formed to allow the connection portion to pass through the first diffusion barrier film. A mark wiring layer is arranged immediately above the second opening region as the same layer as the second wiring layer. A second diffusion barrier film is arranged in contact with the upper surface of the mark wiring layer.
Public/Granted literature
- US20160064323A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2016-03-03
Information query
IPC分类:
