Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US14560425Application Date: 2014-12-04
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Publication No.: US09553152B2Publication Date: 2017-01-24
- Inventor: Toshihiro Ohki , Lei Zhu , Naoya Okamoto , Yuichi Minoura , Shirou Ozaki
- Applicant: FUJITSU LIMITED
- Applicant Address: JP Kawasaki
- Assignee: FUJITSU LIMITED
- Current Assignee: FUJITSU LIMITED
- Current Assignee Address: JP Kawasaki
- Agency: Kratz, Quintos & Hanson, LLP
- Priority: JP2014-001800 20140108
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/205 ; H01L29/423 ; H01L29/49 ; H01L29/778 ; H01L29/78 ; H01L29/10 ; H01L29/20 ; H01L29/51 ; H01L29/08
Abstract:
A semiconductor device includes: a first semiconductor layer which is formed over a substrate and is formed from a nitride semiconductor; a second semiconductor layer which is formed over the first semiconductor layer and is formed from a nitride semiconductor; a third semiconductor layer which is formed over the second semiconductor layer and is formed from a nitride semiconductor; a source electrode and a drain electrode which are formed over the third semiconductor layer; an opening which is formed in the second semiconductor layer and the third semiconductor layer between the source electrode and the drain electrode; an insulating layer which is formed on a side surface and a bottom surface of the opening; and a gate electrode which is formed in the opening through the insulating layer.
Public/Granted literature
- US20150194512A1 SEMICONDUCTOR DEVICE Public/Granted day:2015-07-09
Information query
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