Semiconductor device and method

Invention Grant

US09553155B2 Semiconductor device and method 有权

Title translation: 半导体器件及方法

Please log in to see more content

Patent Title: Semiconductor device and method
Patent Title (中): 半导体器件及方法
Application No.: US14613820

Application Date: 2015-02-04
Publication No.: US09553155B2

Publication Date: 2017-01-24
Inventor: Matthias Strassburg , Gerhard Prechtl
Applicant: Infineon Technologies Austria AG
Applicant Address: AT Villach
Assignee: Infineon Technologies Austria AG
Current Assignee: Infineon Technologies Austria AG
Current Assignee Address: AT Villach
Agency: Murphy, Bilak & Homiller, PLLC
Main IPC: H01L21/338
IPC: H01L21/338 ; H01L29/423 ; H01L29/778 ; H01L29/20

Abstract:

In an embodiment, a semiconductor device includes a High Electron Mobility Transistor (HEMT) including a floating gate. The floating gate includes two or more electrically separated floating gate segments.

Abstract(Chinese):

在一个实施例中，半导体器件包括包括浮动栅极的高电子迁移率晶体管（HEMT）。浮置栅极包括两个或更多个电分离的浮动栅极段。

Public/Granted literature

US20160225864A1 SEMICONDUCTOR DEVICE AND METHOD Public/Granted day:2016-08-04

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/334	....制造单极型器件的台阶式工艺
H01L21/335	.....场效应晶体管
H01L21/338	......带有肖特基栅的