Invention Grant
- Patent Title: Method of forming a semiconductor device
- Patent Title (中): 形成半导体器件的方法
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Application No.: US15176603Application Date: 2016-06-08
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Publication No.: US09553165B2Publication Date: 2017-01-24
- Inventor: Gordon M. Grivna , Ali Salih
- Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Applicant Address: US AZ Phoenix
- Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee Address: US AZ Phoenix
- Agent Robert F. Hightower
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/66 ; H01L29/739 ; H01L21/265 ; H01L21/304 ; H01L21/306 ; H01L21/3065 ; H01L21/762 ; H01L29/417
Abstract:
In one embodiment, an IGBT is formed to include a plurality of termination trenches in a termination region of the IGBT. An embodiment may include that one end of one or more termination trenches may be exposed on one surface of the semiconductor device.
Public/Granted literature
- US20160284814A1 SEMICONDUCTOR DEVICE METHOD Public/Granted day:2016-09-29
Information query
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