Invention Grant
US09553175B2 SONOS type stacks for nonvolatile charge trap memory devices and methods to form the same
有权
用于非易失性电荷陷阱存储器件的SONOS型堆叠及其形成方法
- Patent Title: SONOS type stacks for nonvolatile charge trap memory devices and methods to form the same
- Patent Title (中): 用于非易失性电荷陷阱存储器件的SONOS型堆叠及其形成方法
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Application No.: US14824023Application Date: 2015-08-11
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Publication No.: US09553175B2Publication Date: 2017-01-24
- Inventor: Helmut Puchner , Igor Polishchuk , Sagy Charel Levy
- Applicant: Cypress Semiconductor Corporation
- Applicant Address: US CA San Jose
- Assignee: CYPRESS SEMICONDUCTOR CORPORATION
- Current Assignee: CYPRESS SEMICONDUCTOR CORPORATION
- Current Assignee Address: US CA San Jose
- Agency: Lowenstein Sandler LLP
- Main IPC: H01L21/3205
- IPC: H01L21/3205 ; H01L29/66 ; H01L21/28 ; H01L29/423 ; H01L29/51 ; H01L29/792
Abstract:
A method includes forming a first oxide layer. The method further includes etching a portion of the first oxide layer using a first decoupled plasma nitridation process. The method includes forming, subsequent to the etching, a charge-trapping layer on the first oxide layer.
Public/Granted literature
- US20160104789A1 SONOS Type Stacks for Nonvolatile ChangeTrap Memory Devices and Methods to Form the Same Public/Granted day:2016-04-14
Information query
IPC分类:
