Invention Grant
- Patent Title: Semiconductor component with an emitter control electrode
- Patent Title (中): 具有发射极控制电极的半导体元件
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Application No.: US12977755Application Date: 2010-12-23
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Publication No.: US09553178B2Publication Date: 2017-01-24
- Inventor: Franz Hirler , Anton Mauder , Frank Pfirsch , Hans-Joachim Schulze
- Applicant: Franz Hirler , Anton Mauder , Frank Pfirsch , Hans-Joachim Schulze
- Applicant Address: AT Villach
- Assignee: Infineon Technologies Austria AG
- Current Assignee: Infineon Technologies Austria AG
- Current Assignee Address: AT Villach
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: DE102009055328 20091228
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/739 ; H01L29/06 ; H01L29/423

Abstract:
A semiconductor component includes a first emitter zone of a first conductivity type, a second emitter zone of a second conductivity type, a first base zone arranged between the first and second emitter zones and a first control structure. The first control structure includes a control electrode arranged adjacent the first emitter zone, the control electrode being insulated from the first emitter zone by a first dielectric layer and extending in a current flow direction of the semiconductor component. The first control structure includes a first control connection and at least one first connection zone arranged between the first control connection and the control electrode and comprising a semiconductor material.
Public/Granted literature
- US20110156095A1 Semiconductor Component with an Emitter Control Electrode Public/Granted day:2011-06-30
Information query
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