Invention Grant
- Patent Title: Semiconductor device and related fabrication methods
- Patent Title (中): 半导体器件及相关制造方法
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Application No.: US14567357Application Date: 2014-12-11
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Publication No.: US09553187B2Publication Date: 2017-01-24
- Inventor: Weize Chen , Richard J. De Souza , Mazhar Ul Hoque , Patrice M. Parris
- Applicant: Weize Chen , Richard J. De Souza , Mazhar Ul Hoque , Patrice M. Parris
- Applicant Address: US TX Austin
- Assignee: NXP USA, Inc.
- Current Assignee: NXP USA, Inc.
- Current Assignee Address: US TX Austin
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L27/02 ; H01L21/28 ; H01L29/49
Abstract:
Semiconductor device structures and related fabrication methods are provided. An exemplary semiconductor device structure includes a body well region having a first conductivity type, a drift region and a source region each having a second conductivity type, where a channel portion of the body well region resides laterally between the source region and a first portion of the drift region that is adjacent to the channel portion. A gate structure overlies the channel portion and the adjacent portion of the drift region. A portion of the gate structure overlying the channel portion proximate the source region has the second conductivity type. Another portion of the gate structure that overlies the adjacent portion of the drift region has a different doping, and overlaps at least a portion of the channel portion, with the threshold voltage associated with the gate structure being influenced by the amount of overlap.
Public/Granted literature
- US20160172489A1 SEMICONDUCTOR DEVICE AND RELATED FABRICATION METHODS Public/Granted day:2016-06-16
Information query
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