Invention Grant
US09553190B2 Semiconductor devices including source/drain regions having multiple epitaxial patterns
有权
包括具有多个外延图案的源极/漏极区域的半导体器件
- Patent Title: Semiconductor devices including source/drain regions having multiple epitaxial patterns
- Patent Title (中): 包括具有多个外延图案的源极/漏极区域的半导体器件
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Application No.: US14673519Application Date: 2015-03-30
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Publication No.: US09553190B2Publication Date: 2017-01-24
- Inventor: Keum Seok Park , Jungho Yoo , Jinyeong Joe , Bonyoung Koo , Dongsuk Shin , Hongsik Yoon , Byeongchan Lee
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel, P.A.
- Priority: KR10-2014-0079057 20140626
- Main IPC: H01L29/772
- IPC: H01L29/772 ; H01L29/417 ; H01L29/78 ; H01L29/66 ; H01L29/165
Abstract:
A semiconductor device includes an active pattern protruding from a substrate, a gate structure crossing over the active pattern, and source/drain regions disposed on the active pattern at opposite sides of the gate structure. Each of the source/drain regions includes a first epitaxial pattern contacting the active pattern and a second epitaxial pattern on the first epitaxial pattern. The first epitaxial pattern comprises a material having a lattice constant which is the same as that of the substrate, and the second epitaxial pattern comprises a material having a lattice constant greater than that of the first epitaxial pattern.
Public/Granted literature
- US20150380553A1 SEMICONDUCTOR DEVICES INCLUDING SOURCE/DRAIN REGIONS HAVING MULTIPLE EPITAXIAL PATTERNS Public/Granted day:2015-12-31
Information query
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