Invention Grant
US09553196B2 Multi-gate thin film transistor, array substrate and display device
有权
多栅极薄膜晶体管，阵列基板和显示装置
- Patent Title: Multi-gate thin film transistor, array substrate and display device
- Patent Title (中): 多栅极薄膜晶体管，阵列基板和显示装置
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Application No.: US14445549Application Date: 2014-07-29
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Publication No.: US09553196B2Publication Date: 2017-01-24
- Inventor: Tuo Sun
- Applicant: BOE TECHNOLOGY GROUP CO., LTD.
- Applicant Address: CN Beijing
- Assignee: BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee: BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee Address: CN Beijing
- Agency: Nath, Goldberg & Meyer
- Agent Joshua B. Goldberg; Leonid D. Thenor
- Priority: CN201410120804 20140327
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L29/423
Abstract:
The present invention discloses a multi-gate thin film transistor for realizing a multi-gate occupying a small area, pixels provided with the multi-gate TFTs are high in aperture ratio, and a display device provided with the multi-gate TFTs is high in resolution. The multi-gate thin film transistor comprises: at least three gate electrodes; a plurality of active layers corresponding to each of the gate electrodes, respectively, the active layers being formed into an integrated structure; a source electrode connected with one of the plurality of active layers; and a plurality of drain electrodes connected with each of the remainder of the plurality of active layers, respectively. The present invention further discloses an array substrate comprising the multi-gate thin film transistor, and a display device.
Public/Granted literature
- US20150280008A1 MULTI-GATE THIN FILM TRANSISTOR, ARRAY SUBSTRATE AND DISPLAY DEVICE Public/Granted day:2015-10-01
Information query
IPC分类:
