Invention Grant
US09553206B2 EEPROM core structure embedded into BCD process and forming method thereof
有权
EEPROM核心结构嵌入BCD工艺及其形成方法
- Patent Title: EEPROM core structure embedded into BCD process and forming method thereof
- Patent Title (中): EEPROM核心结构嵌入BCD工艺及其形成方法
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Application No.: US14238057Application Date: 2012-01-19
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Publication No.: US09553206B2Publication Date: 2017-01-24
- Inventor: Jianhua Liu
- Applicant: Jianhua Liu
- Applicant Address: CN Beijing
- Assignee: ADVANCED SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: ADVANCED SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: CN Beijing
- Agency: Quarles & Brady LLP
- Priority: CN201110231902 20110812; WOCN2012/070571 20120119
- International Application: PCT/CN2012/070571 WO 20120119
- International Announcement: WO2013/023445 WO 20130221
- Main IPC: H01L29/788
- IPC: H01L29/788 ; H01L29/66 ; H01L27/115 ; H01L21/8249
Abstract:
The present invention provides an EEPROM core structure embedded into BCD process and forming method thereof. The EEPROM core structure embedded into BCD process comprises a selection transistor and a storage transistor connected in series, wherein the selection transistor is an LDNMOS transistor. The present invention may embed the procedure for forming the EEPROM core structure into the BCD process, which is favorable to reduce the complexity of the process.
Public/Granted literature
- US20140167130A1 EEPROM CORE STRUCTURE EMBEDDED INTO BCD PROCESS AND FORMING METHOD THEREOF Public/Granted day:2014-06-19
Information query
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