A light emitting device includes a first conductive-type semiconductor layer laminated on a substrate; a light emitting layer laminated on the first conductive-type semiconductor layer; a second conductive-type semiconductor layer laminated on the light emitting layer; a first ITO layer laminated at a side of the first conductive-type semiconductor layer opposite to the substrate; a second ITO layer laminated at a side of the second conductive-type semiconductor layer opposite to the substrate; a first metal layer laminated on the first ITO layer; and a second metal layer laminated on the second ITO layer. The first and second metal layers have the same structure and each includes a lower metal layer which contacts a corresponding ITO layer of the first ITO layer and the second ITO layer; and an upper metal layer laminated on the lower metal layer, the upper metal layer being thicker than the lower metal layer.