Invention Grant
US09553575B2 Semiconductor device 有权
半导体器件

Semiconductor device
Abstract:
Two or more pads and are connected to a gate region, so that a pad for applying a gate voltage can be selected. In the case where, for example, the peripheral region is likely to overheat, a turn-on voltage is applied to the first pad to turn on the peripheral region later than the central region, and a turn-off voltage is applied to the second pad to turn off the peripheral region earlier than the central region. The problem that the peripheral region is likely to overheat can be addressed. In the case where the flow of an excess current raises the temperature, the turn-off voltage is applied to the second pad. The problem that the temperature is likely to rise in the peripheral region when an excess current flows can be addressed.
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