Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US14436767Application Date: 2012-12-21
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Publication No.: US09553575B2Publication Date: 2017-01-24
- Inventor: Satoshi Hirose
- Applicant: Satoshi Hirose
- Applicant Address: JP Toyota
- Assignee: TOYOTA JIDOSHA KABUSHIKI KAISHA
- Current Assignee: TOYOTA JIDOSHA KABUSHIKI KAISHA
- Current Assignee Address: JP Toyota
- Agency: Oliff PLC
- International Application: PCT/JP2012/083346 WO 20121221
- International Announcement: WO2014/097488 WO 20140626
- Main IPC: H03K17/567
- IPC: H03K17/567 ; H01L23/528 ; H01L29/423

Abstract:
Two or more pads and are connected to a gate region, so that a pad for applying a gate voltage can be selected. In the case where, for example, the peripheral region is likely to overheat, a turn-on voltage is applied to the first pad to turn on the peripheral region later than the central region, and a turn-off voltage is applied to the second pad to turn off the peripheral region earlier than the central region. The problem that the peripheral region is likely to overheat can be addressed. In the case where the flow of an excess current raises the temperature, the turn-off voltage is applied to the second pad. The problem that the temperature is likely to rise in the peripheral region when an excess current flows can be addressed.
Public/Granted literature
- US20150288357A1 SEMICONDUCTOR DEVICE Public/Granted day:2015-10-08
Information query
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