Invention Grant
- Patent Title: Solid-state imaging apparatus changing a gate voltage of a transfer transistor, driving method for the same, and imaging system
- Patent Title (中): 固态成像装置改变转移晶体管的栅极电压,其驱动方法和成像系统
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Application No.: US14472612Application Date: 2014-08-29
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Publication No.: US09554069B2Publication Date: 2017-01-24
- Inventor: Shinichiro Shimizu , Akira Ohtani , Masaru Fujimura
- Applicant: CANON KABUSHIKI KAISHA
- Applicant Address: JP Tokyo
- Assignee: CANON KABUSHIKI KAISHA
- Current Assignee: CANON KABUSHIKI KAISHA
- Current Assignee Address: JP Tokyo
- Agency: Fitzpatrick, Cella, Harper & Scinto
- Priority: JP2013-185211 20130906
- Main IPC: H04N5/374
- IPC: H04N5/374 ; H04N5/376 ; H01L27/146 ; H04N5/359

Abstract:
A solid-state imaging apparatus includes: a photoelectric conversion unit configured to convert light into an electric charge; a floating diffusion region configured to convert the electric charge into a voltage; a transfer transistor configured to transfer the electric charge from the photoelectric conversion unit to the floating diffusion region; and a transfer transistor driving circuit configured to control a gate potential of the transfer transistor, wherein the transfer transistor driving circuit controls the gate potential so as to be changed in at least two changing rates during a period of transition from the ON state to the OFF state of the transfer transistor, and the second changing rate out of the two changing rates is higher than the first changing rate.
Public/Granted literature
- US20150070554A1 SOLID-STATE IMAGING APPARATUS, DRIVING METHOD FOR THE SAME, AND IMAGING SYSTEM Public/Granted day:2015-03-12
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