Invention Grant
US09554069B2 Solid-state imaging apparatus changing a gate voltage of a transfer transistor, driving method for the same, and imaging system 有权
固态成像装置改变转移晶体管的栅极电压,其驱动方法和成像系统

Solid-state imaging apparatus changing a gate voltage of a transfer transistor, driving method for the same, and imaging system
Abstract:
A solid-state imaging apparatus includes: a photoelectric conversion unit configured to convert light into an electric charge; a floating diffusion region configured to convert the electric charge into a voltage; a transfer transistor configured to transfer the electric charge from the photoelectric conversion unit to the floating diffusion region; and a transfer transistor driving circuit configured to control a gate potential of the transfer transistor, wherein the transfer transistor driving circuit controls the gate potential so as to be changed in at least two changing rates during a period of transition from the ON state to the OFF state of the transfer transistor, and the second changing rate out of the two changing rates is higher than the first changing rate.
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