Invention Grant
- Patent Title: Voltage generating circuit
- Patent Title (中): 电压发生电路
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Application No.: US14944475Application Date: 2015-11-18
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Publication No.: US09558792B2Publication Date: 2017-01-31
- Inventor: Hyun-Sung Hong
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW
- Agency: Hauptman Ham, LLP
- Main IPC: G11C5/14
- IPC: G11C5/14 ; G11C11/4074 ; G11C11/4094 ; G11C11/4091

Abstract:
A circuit includes a first transistor of a first type, a second transistor of a second type, a sense amplifier, a first data line coupled with a first terminal of the sense amplifier, and a second data line coupled with a second terminal of the sense amplifier. The second type is different from the first type. A first terminal of the first transistor is configured to receive a supply voltage. A second terminal of the first transistor, a third terminal of the first transistor, a second terminal of the second transistor, a third terminal of the second transistor are coupled together and are configured to carry a voltage. A first terminal of the second transistor is configured to receive a reference supply voltage. The first and second data lines are configured to receive a voltage value of the voltage.
Public/Granted literature
- US20160071554A1 VOLTAGE GENERATING CIRCUIT Public/Granted day:2016-03-10
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