Invention Grant
- Patent Title: Hybrid analog and digital memory device
- Patent Title (中): 混合模拟和数字存储设备
-
Application No.: US14683850Application Date: 2015-04-10
-
Publication No.: US09558814B2Publication Date: 2017-01-31
- Inventor: Roger F. Galinggana, Jr. , James Arnold V. Gregana , Lloyd Henry I. Li
- Applicant: HGST Netherlands B.V.
- Applicant Address: NL Amsterdam
- Assignee: HGST Netherlands, B.V.
- Current Assignee: HGST Netherlands, B.V.
- Current Assignee Address: NL Amsterdam
- Agency: Shumaker & Sieffert, P.A.
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C11/56
Abstract:
A memory cell including a floating gate transistor including a floating gate, and an analog sensor element adjacent to the floating gate, where an electrical characteristic of the analog sensor element is affected by an amount of charge on the floating gate.
Public/Granted literature
- US20160300608A1 HYBRID ANALOG AND DIGITAL MEMORY DEVICE Public/Granted day:2016-10-13
Information query
