Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US14844174Application Date: 2015-09-03
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Publication No.: US09558840B2Publication Date: 2017-01-31
- Inventor: Shinya Okuno , Shigeki Nagasaka , Toshiyuki Kouchi
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Minato-ku
- Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C16/32 ; G11C16/10 ; G11C16/26 ; G11C16/16 ; G11C16/12 ; G11C16/04

Abstract:
A semiconductor device includes a memory circuit, a first FIFO, a second FIFO and an input/output circuit. The memory circuit outputs data. The first FIFO receives data from the memory circuit and outputs data synchronously with a first clock signal. The second FIFO receives data output from the first FIFO and outputs data synchronously with the first clock signal. The input/output circuit outputs data output from the second FIFO. The second FIFO is disposed closer to the input/output circuit than the first FIFO.
Public/Granted literature
- US20160351269A1 SEMICONDUCTOR DEVICE Public/Granted day:2016-12-01
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