Invention Grant
- Patent Title: Discrete three-dimensional one-time-programmable memory
- Patent Title (中): 离散三维一次可编程存储器
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Application No.: US15062118Application Date: 2016-03-06
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Publication No.: US09558842B2Publication Date: 2017-01-31
- Inventor: Guobiao Zhang
- Applicant: HangZhou HaiCun Information Technology Co., Ltd.
- Applicant Address: CN HangZhou, ZheJiang US OR Corvallis
- Assignee: HangZhou HaiCun Information Technology Co., Ltd.,Guobiao Zhang
- Current Assignee: HangZhou HaiCun Information Technology Co., Ltd.,Guobiao Zhang
- Current Assignee Address: CN HangZhou, ZheJiang US OR Corvallis
- Priority: CN201610084064 20160208
- Main IPC: G11C17/16
- IPC: G11C17/16 ; G11C5/02 ; H01L25/065 ; H01L27/112 ; H01L23/525 ; G11C17/18 ; G11C5/04 ; G11C5/14 ; G11C8/14 ; H01L25/18 ; G11C13/00 ; H01L23/00 ; H01L25/10 ; G11C29/04
Abstract:
The present invention discloses a discrete three-dimensional one-time-programmable memory (3D-OTP). It comprises at least a 3D-array die and at least a peripheral-circuit die. At least a peripheral-circuit component of the 3D-OTP arrays is located on the peripheral-circuit die instead of the 3D-array die. The 3D-array die and the peripheral-circuit die have substantially different back-end-of-line (BEOL) structures.
Public/Granted literature
- US20160189792A1 Discrete Three-Dimensional One-Time-Programmable Memory Public/Granted day:2016-06-30
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