Invention Grant
US09558932B2 Lateral wafer oxidation system with in-situ visual monitoring and method therefor
有权
具有原位视觉监控的侧面晶片氧化系统及其方法
- Patent Title: Lateral wafer oxidation system with in-situ visual monitoring and method therefor
- Patent Title (中): 具有原位视觉监控的侧面晶片氧化系统及其方法
-
Application No.: US14686488Application Date: 2015-04-14
-
Publication No.: US09558932B2Publication Date: 2017-01-31
- Inventor: Majid Riaziat
- Applicant: Majid Riaziat
- Applicant Address: US CA Sunnyvale
- Assignee: CALIFORNIA SCIENTIFIC, INC.
- Current Assignee: CALIFORNIA SCIENTIFIC, INC.
- Current Assignee Address: US CA Sunnyvale
- Agency: Weiss & Moy, P.C.
- Agent Jeffrey D. Moy
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/67 ; H01S5/183
Abstract:
Wafer oxidation apparatus for selective oxidation of a semiconductor workpiece has an oxidation chamber. The oxidation chamber is heated by external infrared heating lamps. A chuck assembly is disposed within the oxidation chamber and configured to be approximately thermally isolated from the oxidation chamber. Carrier gas pathways deliver heated carrier gasses to the oxidation chamber at variable rates for oxidation uniformity.
Public/Granted literature
- US20150364320A1 LATERAL WAFER OXIDATION SYSTEM WITH IN-SITU VISUAL MONITORING AND METHOD THEREFOR Public/Granted day:2015-12-17
Information query
IPC分类:
